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توضیحات تکمیلی
| Authenticity |  |
|---|---|
| Verified Source |  |
| Manufacture Part Number | IRF640NPbF |
| Manufacture | Infineon |
| MOQ (pcs) | 1 |
| Packaging | Unpacked |
| Base Product Number | IRF640N |
| FET Type | N-CH Single |
| Drain Current (Id) (Max) | 18A |
| Drain-Source Voltage (Vdss) | 200V |
| Rds On (Max) @ Id/Vgs | 0.15 ohm @ 11A/10V |
| Vgs (th) (Max) @ Id | 4V @ 250uA |
| Vgs (Max) | ±20V |
| Gate Charge (Qg) (Max) @ Vgs | 67nC @ 10V |
| InCap (Max) @ Vds | 1160pF @ 25V (Typ) |
| Power Dissipation | 150W(Tc) |
| Features | Avalanche |
| FET Technology | HEXFET |
| Marking | IRF640N |
| Package | TO220-3 |
| Mounting Type | Through Hole |
| Operating Temp. | -55°C ~ +175°C (Tj) |
| Status | Active |
| SEP Code | SE22536 |
MOSFET N-CH IRF640NPbF TO220-3 Infineon | 00
| IRF640NPbF | :Manufacture Part Number |
|---|
توضیحات تکمیلی
| Authenticity | |
|---|---|
| Verified Source | |
| Manufacture Part Number | IRF640NPbF |
| Manufacture | Infineon |
| MOQ (pcs) | 1 |
| Packaging | Unpacked |
| Base Product Number | IRF640N |
| FET Type | N-CH Single |
| Drain Current (Id) (Max) | 18A |
| Drain-Source Voltage (Vdss) | 200V |
| Rds On (Max) @ Id/Vgs | 0.15 ohm @ 11A/10V |
| Vgs (th) (Max) @ Id | 4V @ 250uA |
| Vgs (Max) | ±20V |
| Gate Charge (Qg) (Max) @ Vgs | 67nC @ 10V |
| InCap (Max) @ Vds | 1160pF @ 25V (Typ) |
| Power Dissipation | 150W(Tc) |
| Features | Avalanche |
| FET Technology | HEXFET |
| Marking | IRF640N |
| Package | TO220-3 |
| Mounting Type | Through Hole |
| Operating Temp. | -55°C ~ +175°C (Tj) |
| Status | Active |
| SEP Code | SE22536 |
توضیحات تکمیلی
| Authenticity | |
|---|---|
| Verified Source | |
| Manufacture Part Number | IRF640NPbF |
| Manufacture | Infineon |
| MOQ (pcs) | 1 |
| Packaging | Unpacked |
| Base Product Number | IRF640N |
| FET Type | N-CH Single |
| Drain Current (Id) (Max) | 18A |
| Drain-Source Voltage (Vdss) | 200V |
| Rds On (Max) @ Id/Vgs | 0.15 ohm @ 11A/10V |
| Vgs (th) (Max) @ Id | 4V @ 250uA |
| Vgs (Max) | ±20V |
| Gate Charge (Qg) (Max) @ Vgs | 67nC @ 10V |
| InCap (Max) @ Vds | 1160pF @ 25V (Typ) |
| Power Dissipation | 150W(Tc) |
| Features | Avalanche |
| FET Technology | HEXFET |
| Marking | IRF640N |
| Package | TO220-3 |
| Mounting Type | Through Hole |
| Operating Temp. | -55°C ~ +175°C (Tj) |
| Status | Active |
| SEP Code | SE22536 |
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| تعداد بیشتر |
100 عدد در انبار
| MOQ: 1 | STEP: x 1 | Packaging: Unpacked |