No products in the cart.
توضیحات تکمیلی
| Authenticity |  |
|---|---|
| Verified Source |  |
| Manufacture Part Number | IRF630NPbF |
| Manufacture | Infineon |
| MOQ (pcs) | 1 |
| Packaging | Unpacked |
| Base Product Number | IRF630NP |
| FET Type | N-CH Single |
| Drain Current (Id) (Max) | 9.3A |
| Drain-Source Voltage (Vdss) | 200V |
| Rds On (Max) @ Id/Vgs | 0.3 ohm @ 5.4A/10V |
| Vgs (th) (Max) @ Id | 4V @ 250uA |
| Vgs (Max) | ±20V |
| Gate Charge (Qg) (Max) @ Vgs | 35nC @ 10V |
| InCap (Max) @ Vds | 575pF @ 25V (Typ) |
| Power Dissipation | 82W(Tc) |
| Features | Avalanche |
| FET Technology | HEXFET |
| Marking | IRF630N |
| Package | TO220-3 |
| Mounting Type | Through Hole |
| Operating Temp. | -55°C ~ +175°C (Tj) |
| Status | Active |
| SEP Code | SE22537 |
MOSFET N-CH IRF630NPbF TO220-3 Infineon | 00
| IRF630NPbF | :Manufacture Part Number |
|---|
توضیحات تکمیلی
| Authenticity | |
|---|---|
| Verified Source | |
| Manufacture Part Number | IRF630NPbF |
| Manufacture | Infineon |
| MOQ (pcs) | 1 |
| Packaging | Unpacked |
| Base Product Number | IRF630NP |
| FET Type | N-CH Single |
| Drain Current (Id) (Max) | 9.3A |
| Drain-Source Voltage (Vdss) | 200V |
| Rds On (Max) @ Id/Vgs | 0.3 ohm @ 5.4A/10V |
| Vgs (th) (Max) @ Id | 4V @ 250uA |
| Vgs (Max) | ±20V |
| Gate Charge (Qg) (Max) @ Vgs | 35nC @ 10V |
| InCap (Max) @ Vds | 575pF @ 25V (Typ) |
| Power Dissipation | 82W(Tc) |
| Features | Avalanche |
| FET Technology | HEXFET |
| Marking | IRF630N |
| Package | TO220-3 |
| Mounting Type | Through Hole |
| Operating Temp. | -55°C ~ +175°C (Tj) |
| Status | Active |
| SEP Code | SE22537 |
توضیحات تکمیلی
| Authenticity | |
|---|---|
| Verified Source | |
| Manufacture Part Number | IRF630NPbF |
| Manufacture | Infineon |
| MOQ (pcs) | 1 |
| Packaging | Unpacked |
| Base Product Number | IRF630NP |
| FET Type | N-CH Single |
| Drain Current (Id) (Max) | 9.3A |
| Drain-Source Voltage (Vdss) | 200V |
| Rds On (Max) @ Id/Vgs | 0.3 ohm @ 5.4A/10V |
| Vgs (th) (Max) @ Id | 4V @ 250uA |
| Vgs (Max) | ±20V |
| Gate Charge (Qg) (Max) @ Vgs | 35nC @ 10V |
| InCap (Max) @ Vds | 575pF @ 25V (Typ) |
| Power Dissipation | 82W(Tc) |
| Features | Avalanche |
| FET Technology | HEXFET |
| Marking | IRF630N |
| Package | TO220-3 |
| Mounting Type | Through Hole |
| Operating Temp. | -55°C ~ +175°C (Tj) |
| Status | Active |
| SEP Code | SE22537 |
 |
|
||||||
| تعداد بیشتر |
100 عدد در انبار
| MOQ: 1 | STEP: x 1 | Packaging: Unpacked |